creat by art - patented trench schottky technology - excellent high temperature stability - low forward voltage - lower power loss/ high efficiency - high forward surge capability molding compound, ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test symbol unit v rrm v i rrm a e as mj dv/dt v/ s v ac v v br v i f = 5a i f = 10a i f = 5a i f = 10a t j = 25c a t j = 125c ma r jc c/w t j c t stg c note 1: 2.0 s pulse width, f=1.0 khz document number: ds_d1411023 version: f15 dual high-voltage trench schottky rectifier non-repetitive avalanche energy at l=60mh, per diode 80 a polarity: as marked maximum ratings and electrical characteristics (t a =25c unless otherwise noted) features maximum repetitive peak reverse voltage i fsm - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec 5 i r 0.77 t j = 25c - 55 to +150 - 55 to +150 typical thermal resistance instantaneous reverse current per diode at rated reverse voltage - peak repetitive reverse surge current (note 1) mounting torque: 0.56 nm max. 110 80 - - weight: 1.7g (approximately) i f(av) TSF20U80C a 10 parameter per diode maximum average forward rectified current mechanical data taiwan semiconductor TSF20U80C note 2: pulse test with pulse width=300 s, 1% duty cycle operating junction temperature range storage temperature range instantaneous forward voltage per diode ( note 2 ) 0.5 v f 1500 - v - per device case: ito-220ab min. isolation voltage from terminal to heatsink t = 1 min ito-220ab - halogen-free according to iec 61249-2-21 definition 20 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 10000 100 t j = 125c 0.62 v f 0.67 voltage rate of change (rated v r ) - - 0.48 0.52 breakdown voltage ( i r =1.0ma ) - max. 600 -1020 -20 0.70 typ.
document number: ds_d1411023 version: f15 order information (example) TSF20U80C taiwan semiconductor (t a =25c unless otherwise noted) ratings and characteristics curves 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 t j =25 o c t j =100 o c t j =125 o c t j =150 o c 10 100 1000 10000 0.1 1 10 100 f=1.0mhz v sig =50mv p-p 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 t j =25 o c t j =125 o c t j =150 o c t j =100 o c fig. 2 typical forward characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 with heatsink 4in x 6in x 0.25in al-plate fig.1 forward current derating curve average forward current (a) instantaneous forward current (a) capacitance (pf) instantaneous reverse current (ma) fig. 4 typical junction capacitance fig. 3 typical reverse characteristics case temperature ( o c) forward voltage (v) reverse voltage (v) percent of rated peak reverse voltage.(%) TSF20U80C c0g green compound ? code packing ? code part ? no.
package outline dimensions min max min max a 4.30 4.70 0.169 0.185 b 2.50 3.16 0.098 0.124 c 2.30 2.96 0.091 0.117 d 0.46 0.76 0.018 0.030 e 6.30 6.90 0.248 0.272 f 9.60 10.30 0.378 0.406 g 3.00 3.40 0.118 0.134 h 0.95 1.45 0.037 0.057 i 0.50 0.90 0.020 0.035 j 2.40 3.20 0.094 0.126 k 14.80 15.50 0.583 0.610 l - 4.10 - 0.161 m 12.60 13.80 0.496 0.543 n - 1.45 - 0.057 o 2.41 2.67 0.095 0.105 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411023 version: f15 TSF20U80C taiwan semiconductor dim. unit (mm) unit (inch) marking diagram ito-220ab
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1411023 version: f15 TSF20U80C taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
|
